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PDF] IEEE Electron Device Letters information for authors by · 10.1109/led.2017.2701659 · OA.mg
IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7
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PDF) Lo, S.-H , Buchanan, D. A. , Taur, Y. & Wang, W. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs. IEEE Electron Device Lett. 18, 209-211
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PDF) All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology
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High Resolution Fabrication of Josephson Microbridges
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High Performance Monolithically Integrated GaN Driving VMOSFET on LED
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The Inverse-Narrow-Width Effect: Ieee Electron Device Letters, Vol. Edl-I, No. JULY 1986 419 | PDF | Mosfet | Field Effect Transistor
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PDF) High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
